A Feedback Spin-Valve Memristive System

作者：Cai Weiran^*; Schmidt Torsten; Joerges Udo; Ellinger Frank

来源：IEEE Transactions on Circuits and Systems I-Regular Papers, 2012, 59(10): 2405-2412.

DOI：10.1109/TCSI.2012.2189043

• Hall effect
• memristive system
• nonlinear dynamics
• spintronics

We propose theoretically a generalized memristive system based on controlled spin polarizations in giant magnetoresistive material using a feedback loop with classical Hall Effect. The dynamics can exhibit a memristive pinched hysteretic loop while it possesses a self-crossing knot not located at the origin. Additionally, a single-looped orbit can also be observed in the system. We provide a sufficient condition for the stability based on an estimation of the Floquet exponent. The analysis shows that the non-origin-crossing dynamics is generally permitted in a class of passive memory systems that are not subject to Ohm's Law. We further develope the prevailing homogeneous definition to a broadened concept of generalized heterogeneous memristive systems, permitting the self-crossing knot not located at the origin, and ultimately to the concept of compound memory electronic systems.

• 出版日期2012-10
• 单位中国科学院电工研究所