摘要

By electron-beam-induced deposition, we have succeeded in the direct fabrication of nanowires of molybdenum oxide (MoOx) and molybdenum carbide (MoC) on a SiO2 substrate set in a scanning electron microscope. In order to prepare MoOx specimens of high purity, a precursor gas of molybdenum hexacarbonyl [Mo(CO)(6)] is used, mixed with oxygen gas. On the other hand, MoC is grown by mixing H2O gas with the precursor gas. The electrical transport properties of the nanowires are investigated by the DC four-terminal method. A highly resistive MoOx nanowire prepared from an as-deposited specimen by annealing in air shows nonlinear current-voltage characteristics and a high photoconductivity. The resistivity rho of an as-deposited amorphous MoC (a-MoC) nanowire takes its maximum at a temperature T approximate to 10 K and decreases to approximate to 0 with decreasing temperature. This behavior of rho(T) indicates the possible occurrence of superconductivity in a-MoC nanowires. The characteristic of rho(T) below the superconducting transition temperature T-c approximate to 4 K can be well explained by the quantum phase-slip model with a coherence length xi(0) approximate to 8 nmat T=0.

  • 出版日期2014-7-18