A Frequency-Dependent Capacitance-Voltage Model for Thin-Film Transistors

作者：Guo, Xuekai; Wang, Mingxiang^*; Han, Zhiyuan

来源：IEEE Transactions on Electron Devices, 2016, 63(4): 1666-1673.

DOI：10.1109/TED.2016.2523517

• Frequency-dependent capacitance-voltage (CV) model
• thin-film transistors (TFTs)
• transmission line method (TLM)
• trapped charges

A frequency-dependent capacitance-voltage (CV) model is developed for thin-film transistors (TFTs). The model includes not only a static CV model for channel charge analysis and a transmission line method for RC delay effect but also the frequency-dependent trapped charges effect on the measured capacitance. The complete model based on the same set of model parameters is verified by the measured CV characteristics of top-gated self-aligned poly-Si TFTs with varied frequencies from 10 kHz to 1.5 MHz for two devices of different channel lengths, and at both room temperature and an elevated temperature of 100 degrees C.

• 出版日期2016-4
• 单位苏州大学