Aluminium doped ZnO films: electrical, optical and photoresponse studies

作者：Mridha S; Basak D^*

来源：Journal of Physics D: Applied Physics , 2007, 40(22): 6902-6907.

DOI：10.1088/0022-3727/40/22/008

A series of Al doped ZnO (ZnO : Al) films with different Al concentrations have been deposited on glass substrates using the sol-gel spin coating technique and the effect of Al concentrations on the structural, electrical, optical and photoresponse properties have been investigated. The XRD results show the presence of peaks due to the reflections of the planes from a wurtzite type of ZnO structure. The surface morphology shows that the grains become non-uniform and smaller in size as the Al doping level increases. For 1-2% Al doping, the film attains highest carrier concentration of about similar to 2.7 x 10(19) cm(-3) and lowest resistivity of similar to 2 x 10(-2) Omega cm. The excitonic nature in the absorption spectrum disappears for doping above 1%. The band gap increases with the increase in the Al concentration. The photoconductivity studies show that although the photoresponse properties are degraded due to incorporation of Al atoms, the 1% Al doped film shows the best photoresponse properties within the doping limit up to 5%.

• 出版日期2007-11-21