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摘要
In this study, the Zn thin films were evaporated on the glass substrates at room temperature (RT). Then the substrates were transferred into a thermal tube furnace to form the ZnO thin films. This oxidation processes were carried out in the air by two steps: 250 degrees C for 2 h and then 400, 450, 500, 550 or 600 degrees C for another 1 h. The X-ray diffraction (XRD) and the scanning electron microscopy (SEM) studies indicate that the ZnO thin film obtained at 500 degrees C has the best crystallinity. The RT photoluminescence (PL) measurements also show that the film oxidized at 500 degrees C exhibits the highest Ultraviolet (UV) emission intensity at 370 nm with the narrowest full-width at half-maximum (FWHM) of 110 meV. By optimizing the process parameters of this simple technique, high quality ZnO thin films can be acquired.
