Microwave assisted growth of copper germanide thin films at very low temperatures

作者：Das Sayantan; Alford T L^*

来源：Applied Physics Letters, 2013, 103(9): 094104.

DOI：10.1063/1.4820253

Herein the synthesis of Cu3Ge films by exposing Cu-Ge alloy films to microwave radiation is reported. It is shown that microwave radiation led to the formation of copper germanide at temperatures ca. 80 degrees C. The electrical properties of the Cu3Ge films are presented and compared for various annealing times. X-ray diffraction shows that the Cu3Ge films formed after microwave annealing is crystalline in the orthorhombic phase. Rutherford backscattering and X-ray photoelectron spectroscopy confirms the formation of copper oxide encapsulation layer. Despite the slight oxidation of Cu during the microwave anneal the lowest resistivity of Cu3Ge films obtained is 14 mu X-cm.

• 出版日期2013-8-26