A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)

作者：Shan Rong^*; Ouardi Siham; Fecher Gerhard H; Gao Li; Kellock Andrew; Gloskovskii Andrei; ViolBarbosa Carlos E; Ikenaga Eiji; Felser Claudia; Parkin Stuart S P

来源：Applied Physics Letters, 2012, 101(21): 212102.

DOI：10.1063/1.4764520

Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100) substrates by magnetron sputtering. The intensity ratio of the (200) and (400) diffraction peaks, I(200)/I(400)=2.93, was close to the theoretical value (3.03). The electronic structure of NiYBi was calculated using WIEN2k, and a narrow indirect band gap of width of 210 meV was found. The valence band spectra of the films obtained by linear dichroism in hard x-ray photoelectron spectroscopy exhibit clear structures that are in good agreement with the calculated band structure of NiYBi.

• 出版日期2012-11-19
• 单位IBM