A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics

作者：Lime Francois^*; Moldovan Oana; Iniguez Benjamin

来源：IEEE Transactions on Electron Devices, 2014, 61(9): 3036-3041.

DOI：10.1109/TED.2014.2340441

• Compact model
• drain current
• gate-all-around (GAA) MOSFET
• junctionless

In this paper, we solved Poisson equation in cylindrical coordinates using approximations to obtain a compact model for the drain current of long-channel junctionless gate-all-around MOSFETs. The resulting model is analytical, explicit, and valid for depletion and accumulation, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good.

• 出版日期2014-9