Atmospheric Spatial Atomic Layer Deposition of In-Doped ZnO

作者：Illiberi A^*; Scherpenborg R; Roozeboom F; Poodt P

来源：ECS Journal of Solid State Science and Technology, 2014, 3(5): P111-P114.

DOI：10.1149/2.002405jss

Indium-doped zinc oxide (ZnO: In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[ In+ Zn] = 0 to 23% by co-injecting the vaporized metal precursors (i.e. DEZ and TMIn) in the deposition region and varying their flows. A high doping efficiency (up to 95%) is achieved, resulting in films with very high carrier density (6.10(20) cm(-3)), low resistivity (3 m Omega center dot cm) and high transparency in the visible range (> 85%). The morphology of the films changes from polycrystalline to amorphous with increasing indium content above 15%, while maintaining a low resistivity value (< 7 m Omega center dot cm). Spatial-ALD combines a fine tuning of the composition, morphology and electrical properties of ZnO: In films with high deposition rates (> 0.1 nm/s).

• 出版日期2014