摘要

A family of 1,1,1,2,2,2-hexaamino-disilanes with the formula (RHN)(3)Si-Si(NHR)(3) (R = nPr, iPr, nBu, iBu, sBu, Cy) as, precursors for the CVD growth of silicon-based films has been synthesized and characterized by H-1 NMR, C-13 NMR, Si-29 NMR, EI-HRMS, elemental analysis and X-ray diffraction where necessary. Thermal properties, including stability, volatility, transport behavior and vapor pressure were evaluated by thermogravimetric analysis (TGA) to verify that thermal properties of the precursors can be tuned by small variation of the substituents form secondary amino to primary amino units and to confirm their suitability for the CVD procedure. Finally, deposition was accomplished in a hot wall CVD reactor, which preliminarily verified the ability of these compounds as CVD precursors.