摘要
The Poisson ratio. of In2O3 has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO2 substrates. The experimental results are in good agreement with values for. calculated using atomistic simulation procedures.
- 出版日期2011-12-1