A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage Operation

作者：Moon Joon Bae^*; Moon Dong Il; Choi Yang Kyu

来源：IEEE Transactions on Electron Devices, 2014, 61(1): 2-7.

DOI：10.1109/TED.2013.2288272

• Band offset
• bandgap-engineering
• biristor
• bistable resistor
• germanium (Ge)
• heterogeneous bandgap
• open-base breakdown
• silicon-germanium

A bandgap-engineered silicon-germanium biristor for low-voltage operation is investigated through numerical simulations. A reduced latch-up voltage is achieved using germanium as a base, and improved hysteresis is attained by adopting a hetero-bandgap structure which harnesses the silicon-germanium composite at the collector/emitter. The geometric parameters of the base length and base diameter are optimized. The proposed device shows a much lower latch-up voltage than a pure-silicon biristor and larger hysteresis than a pure-germanium biristor. Thus, the proposed bandgap-engineered silicon-germanium biristor is preferable for low-voltage operations.

• 出版日期2014-1