Laser-induced forward transfer of polythiophene- based derivatives for fully polymeric thin film transistors

作者：Rapp Ludovic^*; Constantinescu Catalin; Delaporte Philippe; Alloncle Anne Patricia

来源：Organic Electronics, 2014, 15(8): 1868-1875.

DOI：10.1016/j.orgel.2014.04.029

• Laser printing
• Laser-induced forward transfer
• Organic transistor
• Polymer
• Polythiophene
• Low pressure

Polymeric thin-film transistors (pTFTs) have been fabricated by pulsed-laser printing of semiconductor and conductor polythiophene-based derivatives. Thin solid layers of semiconducting poly(3,3''' didodecylquaterthiophene) (PQT-12) have been transferred by a laser-induced forward transfer (LIFT) technique on Si/SiO2 receiver substrates. Optimization of the transfer conditions and of the pixels morphologies has been realized. A marked improvement in the quality of the pixels has been observed, in terms of morphology and structure, by reducing the environmental pressure to 90 mbar during LIFT. Subsequently, poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) has also been laser-printed and used as source/drain electrodes in the transistor configuration. Functional polymeric transistors have been obtained with high field-effect mobility up to 2 x 10 (2) cm(2) V (1) s (1) together with current modulation of 10(4).

• 出版日期2014-8