Al doping effect on electrical and dielectric aging behavior against impulse surge in ZPCCYA-based varistors

作者：Nahm Choon W^*

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2010, 170(1-3): 123-128.

DOI：10.1016/j.mseb.2010.03.036

• Doping effects
• Electrical measurement
• Impulse surge
• Zinc oxide
• Varistors

Al doping effect on electrical and dielectric aging behavior against impulse surge in the ZPCCYA-based varistors was investigated. The clamp ratio (K) decreased in accordance with increasing Al(2)O(3) content up to 0.005 mol%. A further increase in Al(2)O(3) doping level caused K to increase. The K value at a surge current of 5A and 10 A for the varistor doped with 0.005 mol% Al(2)O(3) exhibited 1.49 and 1.57, respectively. Furthermore, the K value at a higher surge current of 1200A was 2.44 for the varistors doped with 0.005 mol% and 0.01 mol% Al(2)O(3). The best electrical and dielectric stability against impulse surge current of 1200 A was obtained at 0.01 mol% Al(2)O(3), where %Delta E(1mA/cm)(2) = -1.0%, %Delta alpha = 0%, %Delta J(L) = -3.9%, %Delta epsilon'(APP) = +1.4%, and %Delta tan delta= -10.5%. Conclusively. Al(2)O(3) content was optimized at 0.01 mol% in terms of the surge absorption capability.

• 出版日期2010-6-15