Dislocation Reduction by Glide in Epitaxial IV-VI Layers on Si Substrates

作者：Zogg H^*

来源：Journal of Electronic Materials, 2012, 41(7): 1931-1935.

DOI：10.1007/s11664-012-2031-8

• Molecular beam epitaxy
• heteroepitaxy
• dislocation reduction
• lead chalcogenides

It is explained with a simple model why the reduction of threading dislocation (TD) densities in epitaxial lattice and thermal expansion mismatched IV-VI layers such as PbSe(111) on Si(111) substrates follows a 1/h (2) dependence where h is the thickness of the layer. This is in contrast to the 1/h dependence for III-V and II-VI layers grown on mismatched substrates. The 1/h (2) dependence results since the thermal mismatch strain is mainly reduced by glide and reactions of the TD in their main {100}-type glide system of the NaCl-type IV-VI semiconductors. In addition, multiple thermal cycles lead to further reduction of the TD densities by glide and fusion since fusion does not cause dislocation blocking.

• 出版日期2012-7