Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

作者：Sharma Vivek^*; Tracy Clarence; Schroder Dieter; Herasimenka Stanislau; Dauksher William; Bowden Stuart

来源：Applied Physics Letters, 2014, 104(5): 053503.

DOI：10.1063/1.4863829

High quality surface passivation (S-eff < 5 cm/s) was achieved on polished float zone and textured p-and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (> +/- 8 x 10(12) cm(-2)) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiNx)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.

• 出版日期2014-2-3