Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

作者：Lee Min Hung^*; Luo Jun Dao; Cheng Chih Ching; Huang Jian Shiou; Chueh Yu Lun; Chen Chih Wei; Wu Tai Yuan; Chen Yu Sheng; Lee Heng Yuan; Chen Fred; Tsai Ming Jinn

来源：Japanese Journal of Applied Physics, 2014, 53(8): 90-92.

DOI：10.7567/JJAP.53.08LE03

The advantage of a nonlinear bidirectional selector is its high access ratio with multiple transport mechanisms in a wide bias range. The multilayer structure of TiN/Al2O3/TiO2/Al2O3/TiN with a nonlinear varistor characteristic is proposed. The features of the structure include its low-temperature process (similar to 250 degrees C) for stackable applications, non-requirement of rare materials such as Pt, and its high access ratio (similar to 3200). The varistor characteristic of the nonlinear selector is discussed and attributed to carrier tunneling and thermionic emission for small biases (OFF state) and large biases (ON state), respectively. The selector shows scaling feasibility owing to its property of inertness to SiO2 encapsulation and is compatible with the current IC and memory industry.

• 出版日期2014-8
• 单位清华大学