科研之友
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摘要
Aiming to improve the displacement of the piezoelectric membrane microactuators, controllable in-plane tensile stress was introduced by applying a bias voltage on the idle part of PZT. The stress generated by the bias voltage was calculated by an analytical model based on the theory of plates and shells. Analytical result shows that tensile stress with a magnitude of 10 MPa can be generated under 100 V bias voltage. The stress is large enough to cause the change of piezoelectric coefficient d(31) as well as the displacement of the actuator. Then the experimental results on the PZT thick film actuators demonstrated that d(31) was remarkable increased for both the disc actuator and the ring actuator under an appropriate bias voltage, improving the displacement by 6% and 42%, respectively. Furthermore, the resonance frequency shifts were observed as a result of Young's modulus change under the bias voltage.
