Active Control of Ferroelectric Switching Using Defect-Dipole Engineering

作者：Lee Daesu; Jeon Byung Chul; Baek Seung Hyub; Yang Sang Mo; Shin Yeong Jae; Kim Tae Heon; Kim Yong Su; Yoon Jong Gul; Eom Chang Beom; Noh Tae Won^*

来源：Advanced Materials, 2012, 24(48): 6490-6495.

DOI：10.1002/adma.201203101

• ferroelectrics
• defect engineering
• piezoresponse force microscopy
• nonvolatile memory

Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage.

• 出版日期2012-12-18