New LDMOS/LIGBT hybrid structure in SPIC

作者：Zhu Xiao'an^*; Li Xuening; Fang Jian; Yang Jian; Li Zhaoji

来源：Acta Electronica Sinica, 2000, 28(5): 122-124.

• Double diffusion metal oxide semiconductor transistors
• Hybrid structure
• Insulated gate bipolar transistors
• Lateral insulated grid bipolar transistors
• Smart power integrated circuits

A special LDMOS/LIGBT hybrid structure is proposed in this paper. It has both characteristics of LIGBT's strong drive ability and LDMOS's fast speed. Also, it has small substrate current and can prevent latch-up well. Using it, we can get stable signal in the wide voltage range. The results of numerical simulation and experiments demonstrate that this hybrid structure has excellent advantages for high-side and low-side signal transmissions.

• 出版日期2000