Protonic defect induced carrier doping in TTFCOO-NH4+: Tunable doping level by solvent

作者：Terauchi Takeshi; Kobayashi Yuka^*; Iwai Hideo; Tanaka Akihiro

来源：Synthetic Metals, 2012, 162(5-6): 531-535.

DOI：10.1016/j.synthmet.2012.01.026

• Protonic defect
• Carrier doping
• XPS
• Salt bridge
• Charge transport

The origin of carrier doping in TTFCOO-NH4+ has been verified to include protonic defect in salt bridge by means of X-ray photoelectron spectroscopy (XPS), for the first time. The emergence of spin in TTFCOO-NH4+ is tunable over quite a wide range (9-33%) only by selecting a suitable solvent for the salt crystallization. The spin concentration of the solvent-dependent salts weakly correlates with intensity of optical absorption in near-infrared region, values of g-tensor and dc conductivity at rt. The solvents determining doping level of the salt are classified into three categories by self-dissociation ability (pK(SH)) of solvent, which likely controls inclusion of protonic defect in the salts.

• 出版日期2012-4