All-Amorphous-Oxide Transparent, Flexible Thin-Film Transistors. Efficacy of Bilayer Gate Dielectrics

作者：Liu Jun; Buchholz D Bruce; Hennek Jonathan W; Chang Robert P H^*; Facchetti Antonio; Marks Tobin J

来源：Journal of the American Chemical Society, 2010, 132(34): 11934-11942.

DOI：10.1021/ja9103155

Optically transparent and mechanically flexible thin-film transistors (TF-TFTs) composed exclusively of amorphous metal oxide films are fabricated on plastic substrates by combining an amorphous Ta(2)O(5)/SiO(x) bilayer transparent oxide insulator (TOI) gate dielectric with an amorphous zinc indium tin oxide (a-ZITO) transparent oxide semiconductor (TOS) channel and a-ZITO transparent oxide conductor (TOC) electrodes. The bilayer gate dielectric is fabricated by the post-cross-linking of vapor-deposited hexachlorodisiloxane-derived films to form thin SiO(x) layers (v-SiO(x)) on amorphous Ta(2)O(5) (a-Ta(2)O(5)) films grown by ion-assisted deposition at room temperature. The a-Ta(2)O(5)/v-SiO(x) bilayer TOI dielectric integrates the large capacitance of the high dielectric constant a-Ta(2)O(5) layer with the excellent dielectric/semiconductor interfacial compatibility of the v-SiO(x) layer in a-ZITO TOS-based TF-TFTs. These all-amorphous-oxide TF-TFTs, having a channel length and width of 100 and 2000 mu m, respectively, perform far better than a-Ta(2)O(5)-only devices and exhibit saturation-regime field-effect mobilities of similar to 20 cm(2)/V.s, on-currents >10(-4) A, and current on off ratios >10(5). These TFTs operate at low voltages (similar to 4.0 V) and exhibit good visible-region optical transparency and excellent mechanical flexibility.

• 出版日期2010-9-1
• 单位西北大学