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摘要
This paper presents an improved InGaP/GaAs heterojunction bipolar transistor (HBT) model based on the Vertical Bipolar Inter-Company (VBIC) model. New transport current expression is proposed by considering the heterojunction effect. Collector capacitance is developed due to the mobile charge modulation, and the transit time formula is improved to account for electron velocity variation with the collector field under high current. The extraction flow is demonstrated. The new model has been verified by measurements on I-V, S-parameter, cut-off frequency and large-signal conditions.
- 出版日期2013-2
- 单位清华大学
