The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells

作者：Bi, Zhen^*; Zhang, Jincheng; Lv, Ling; Hao, Yue

来源：IEEE Photonics Technology Letters, 2014, 26(15): 1492-1494.

DOI：10.1109/LPT.2014.2327072

• Solar cells
• InGaN
• proton
• irradiation

The effect of 3-MeV proton irradiation on InGaN/GaN multiple quantum wells ( MQWs) solar cells was investigated. The irradiation degradation of the photoluminescence characteristics of the InGaN film was also measured, indicating its potential to be used in space solar cells. With the proton fluence increasing from 0 to 1 x 10(14)/cm(2), the conversion efficiency (eta) of the InGaN/GaN MQWs cell declined from 0.61% to 0.14%.

• 出版日期2014-8-1
• 单位西安电子科技大学