Epitaxial growth of silicon on silicon implanted with iron ions and optical properties of resulting structures

作者：Galkin G G^*; Goroshko D L; Chusovitin E A; Polyarnyi V O; Bayazitov R M; Batalov R I

来源：Technical Physics, 2008, 53(2): 224-230.

DOI：10.1134/S1063784208020126

The method of ultrahigh-vacuum low-temperature (T= 850 degrees C) purification of silicon single crystals having the (100) and (111) orientation and implanted with low-energy (E = 40 keV) iron ions with various doses (Phi = 10(15)-1.8 x 10(17) cm(-2)) and subjected to pulsed ion treatment (PIT) in a silicon atom flow has been tested successfully. The formation of semiconducting iron disilicide (beta-FeSi2) near the surface after PIT is confirmed for a Si(100) sample implanted with the highest dose of iron ions. The possibility of obtaining atomically smooth and reconstructed silicon surfaces is demonstrated. Smooth epitaxial silicon films with a roughness on the order of 1 nm and a thickness of up to 1.7 pm are grown on samples with an implantation dose of up to 10(16) cm(-2). Optical properties of the samples before and after the growth of silicon layers are studied; the results indicate high quality of the grown layers and the absence of iron disilicide on their surface.

• 出版日期2008-2