科研之友
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摘要
The difficulty of achieving p-type conductance has severely limited the application of ZnO to electronic devices. In this work, we propose a simple and effective way to achieving p-type semiconducting ZnO nanowires (NWs) through density functional theory computations. Adsorption of tetrathiafulvalene (TTF) during synthetic procedures leads to lower formation energies, and accordingly higher concentration of p-type defects; after the formation of ZnO NWs and the desorption of TTF, p-type ZnO NWs can be achieved. Also, we present a facile synthesis route on basis of previous experiments, which provides some guidance for the realization of p-type ZnO NWs.
- 出版日期2013-5
- 单位南开大学
