A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si

作者：Das Jo^*; Everts Jordi; Van Den Keybus Jeroen; Van Hove Marleen; Visalli Domenica; Srivastava Puneet; Marcon Denis; Cheng Kai; Leys Maarten; Decoutere Stefaan; Driesen Johan; Borghs Gustaaf

来源：IEEE Electron Device Letters, 2011, 32(10): 1370-1372.

DOI：10.1109/LED.2011.2162393

• Converters
• efficiency
• GaN
• high voltage
• power field-effect transistors (FETs)
• SPICE

III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6- mm gate width) GaN transistor are presented: R-ON * Q(G) of 2.5 Omega . nC is obtained at V-DS = 140 V. The switching performance of the GaN DHFET is studied in a dedicated high- frequency boost converter: both the switching times and power losses are characterized. We show converter efficiency values up to 96.1% at 500 kHz and 93.9% at 850 kHz at output power of 100 W.

• 出版日期2011-10