Depth dependent tetragonal distortion of a GaN epilayer with an AlN interlayer on Si(111) studied by Rutherford backscattering/channeling

作者：Wang Huan; Hou Lina; Yao Shude^*

来源：Thin Solid Films, 2014, 565: 69-71.

DOI：10.1016/j.tsf.2014.06.056

• Nitrides
• Epitaxial growth
• Elastic properties

Rutherford backscattering and channeling have been used to characterize the structure of an epitaxial GaN layer grown by metal-organic chemical vapor deposition on a Si(111) substrate. Using the channeling angular scan around an off-normal <1<(2)over bar>13> axis in the {10 (1) over bar0} plane of the GaN layer, the tetragonal distortion e(T), which is caused by the elastic strain in the epilayer, was determined. Moreover, the depth dependence of the e(T) was obtained by this technique. Our results show that the e(T) of the GaN epilayer is drastically reduced from 0.41% to 0.22% by inserting a 20 nm AlN interlayer. A fully relaxed (e(T)=0) GaN layer with a thickness of <1.5 mu m is expected.

• 出版日期2014-8-28
• 单位北京大学; 中国工程物理研究院