Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

作者：Liebich S^*; Zimprich M; Beyer A; Lange C; Franzbach D J; Chatterjee S; Hossain N; Sweeney S J; Volz K; Kunert B; Stolz W

来源：Applied Physics Letters, 2011, 99(7): 071109.

DOI：10.1063/1.3624927

The lattice-matched growth of the direct band gap material Ga(NAsP) is a seminal concept for the monolithic integration of III/V laser on a silicon substrate. Here, we report on the growth, characterization, and lasing properties of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures embedded in (BGa) P cladding layers which were deposited on an exactly oriented (001) Si substrate. Structural investigations confirm a high crystal quality without any indication for misfit or threading dislocation formation. Laser operation between 800 nm and 900 nm of these broad area device structures was achieved under optical pumping as well as electrical injection for temperatures up to 150 K. This "proof of principle" points to the enormous potential of Ga(NAsP) as an optical complement to Si microelectronics.

• 出版日期2011-8-15