A Comprehensive Study on the Geometrical Effects in High-Power 4H-SiC BJTs

作者：Salemi Arash^*; Elahipanah Hossein; Zetterling Carl Mikael; Ostling Mikael

来源：IEEE Transactions on Electron Devices, 2017, 64(3): 882-887.

DOI：10.1109/TED.2016.2631303

• Base contact-emitter edge
• base width
• current density
• current gain
• emitter contact-emitter edge distance
• emitter width
• hexagon cell geometry
• implantation-free
• on-resistance
• silicon carbide (SiC)
• single finger design
• square cell geometry

Geometrical effects on the forward characteristics of high-power bipolar junction transistors are studied. An implantation-free area optimized junction termination is implemented in order to have a stable breakdown voltage. The effect of varying the emitter-base geometry, i.e., the emitter width (W-E), the base width (W-B), emitter contact-emitter edge distance (W-n), and base contact-emitter edge (W-p) on the on-state characteristics is studied in the different emitter cell geometries. The emitter size effect shows the highest influence on the current gain (fi). It shows a significant effect on the fi (single finger design, about 61%; square cell geometry, about 98%; hexagon cell geometry, about 90%). The base size effect also shows a significant improvement on the fi of about 23% at a given W-E.

• 出版日期2017-3