Design and implementation of a 1-V transformer magnetic feedback low-noise amplifier (LNA) at 5-6 GHz, in a 90 nm complementary metal-oxide-semiconductor (CMOS) process

作者：Kytonaki Eleni Sotiria^*; Simitsakis Paschalis; Bazigos Antonios; Papananos Yannis

来源：International Journal of Electronics, 2011, 98(2): 235-248.

DOI：10.1080/00207217.2010.520149

• RFIC design
• sub-100 nm CMOS
• low power
• LNA
• magnetic feedback
• Miller effect

In this study, a low-noise amplifier (LNA) suitable for low-voltage operation is presented. The LNA operates at a frequency range between 5 and 6 GHz. Its topology exploits magnetic feedback to achieve high reverse isolation and low noise performance without a significant degradation of the gain and linearity of the circuit. The design has been fabricated, considering full electrostatic discharge protection, in a modern 90 nm complementary metal-oxide-semiconductor process. The measured performance, at 5.4 GHz, shows a reverse isolation of -17.3 dB, a gain of 10.4 dB, a noise figure of 0.98 dB and an input intercept point of 1.4 dBm. The circuit dissipates 12.5 mW from a 1 V supply, while it occupies 0.162 mm(2) of the die area.

• 出版日期2011