Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

作者：Faqir M; Bouya M^*; Malbert N; Labat N; Carisetti D; Lambert B; Verzellesi G; Fantini F

来源：Microelectronics Reliability, 2010, 50(9-11): 1520-1522.

DOI：10.1016/j.microrel.2010.07.020

In this work, current collapse effects in AlGaN/GaN HEMTs are investigated by means of measurements and two-dimensional physical simulations. According to pulsed measurements, the used devices exhibit a significant gate-lag and a less pronounced drain-lag ascribed to the presence of surface/barrier and buffer traps, respectively. As a matter of fact, two trap levels (0.45 eV and 0.78 eV) were extracted by trapping analysis based on isothermal current transient. On the other hand, 20 physical simulations suggest that the kink effect can be explained by electron trapping into barrier traps and a consequent electron emission after a certain electric-field is reached.

• 出版日期2010-11