摘要
Chlorine (Cl) doped ZnO thin films are grown using Pulsed Laser Deposition (PLD) to conduct a feasibility study for the possible application of this material as transparent conducting electrode (TCO) in transparent electrodes. Cl doped ZnO films are deposited on c-plane (0001) sapphire (Al2O3) and glass substrates at 100 degrees C using two Cl doped ZnO targets with chlorine concentrations 1.4 at% and 2.4 at% respectively. Optical properties studied using UV-visible spectrometer indicates that Cl doped ZnO samples have 90% average transmittance in the visible region. A carrier concentration of-4.04 x 10(20) cm(-3), resistivity of 6.344 x 10(-4) Omega cm and sheet resistance of 34.3 Omega/sq at room temperature are derived from Hall measurements and four probe measurements carried out on ZnO:Cl (2.4 at%) thin films. The reports indicate a better transparency and conductance in ZnO compared to similar reports on ZnO published elsewhere. Therefore, Cl doped ZnO is a possible potential TCO alternative for application as transparent electrodes in optoelectronics.
- 出版日期2012