Aluminum induced in situ crystallization of amorphous SiC

作者：Wang Li^*; Dimitrijev Sima; Tanner Philip; Zou Jin

来源：Applied Physics Letters, 2009, 94(18): 181909.

DOI：10.1063/1.3132053

• aluminium
• amorphous semiconductors
• chemical vapour deposition
• crystallisation
• nucleation
• semiconductor thin films
• silicon
• silicon compounds
• surface chemistry
• transmission electron microscopy
• wide band gap semiconductors

Experimental evidence of aluminum induced in situ crystallization of amorphous SiC is presented. The deposition of SiC films on Si substrates was performed using low pressure chemical vapor deposition method at 600 degrees C with concurrent supply of Al(CH(3))(3) and H(3)SiCH(3). Transmission electron micrographs confirm the presence of nanocrystals, whereas capacitance-voltage measurements demonstrate that the deposited films are p type doped. A crystallization mechanism is proposed based on the classic theory of nucleation in the growth rate limited regime. The introduction of Al(CH(3))(3) enhances the surface reaction and increases the supersaturation, which reduces the activation energy for nucleation.

• 出版日期2009-5-4