Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3

作者：Afanas'ev V V^*; Badylevich M; Stesmans A; Laha A; Osten H J; Fissel A

来源：Applied Physics Letters, 2009, 95(10): 102107.

DOI：10.1063/1.3204019

• conduction bands
• elemental semiconductors
• energy gap
• gadolinium compounds
• interface states
• nanostructured materials
• photoconductivity
• silicon

Silicon nanocrystals embedded in a lattice-matched Gd2O3 matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.

• 出版日期2009-9-7