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摘要
We fabricate regular arrays of nanoelectrodes on NiO thin films via nanosphere lithography and directly probe the nanoscale resistive switching using a conductive atomic force microscope. The unipolar resistive switching is consistent with the conducting filament formation/rupture mechanism, and the switching power is as low as 10(-9) W. We find that only about half of devices are switchable, and the Monte Carlo simulation suggests strong correlations between the switching reliability, the electrode size, and the filament dimension and density.
- 出版日期2010-9-27
- 单位南阳理工学院
