摘要

A novel topology for realizing voltage-mode (VM) full-wave rectifier/sinusoidal frequency doubler based on current feedback operational amplifiers (CFOAs) and n-channel metal-oxide semiconductor (NMOS) transistors is proposed in this study. The proposed full-wave rectifier structure employs two CFOAs and three enhancement-mode NMOS transistors. With a slight modification, the sinusoidal frequency doubler circuit can be adopted from the full-wave rectifier circuit by replacing a grounded resistor instead of one of the NMOS transistors. Both of the proposed circuits enjoy low output and high input impedance properties which make them convenient for cascading easily with other VM circuits without needing any extra buffer circuits. No passive component matching conditions are needed. The proposed circuits are simulated by using SPICE program to verify the theoretical analysis.

  • 出版日期2017-11