摘要

A novel transparent conducting oxide, MgTiO3-doped indium oxide (IMTO), is developed via double source reactive electron beam evaporation technology. The IMTO film exhibits a high work function of 5.16 eV and its stability is demonstrated in air for two months. The optical and electrical properties of IMTO film are also carried out, which are comparable to the commercial ITO. OLEDs and PSCs are fabricated by employing IMTO as anode to try to explore the effects of IMTO on device performance. Due to the outstanding photoelectric characteristics, significant improvements in device performance are achieved for the IMTO-anode OLED and PSC.