摘要
We consider the possibility of manufacturing a planar antenna on the dielectric layer with high permittivity, which is intended for a monolithic planar detector of the millimeter-wave range. The previous design of the slot antenna on a foil-cladded dielectric with low permittivity (epsilon = 2.2) is analyzed. The simulation results show that a transition from the substrate with low dielectric permittivity to a semi-insulating GaAs substrate (epsilon a parts per thousand 13) with the directivity kept at a level of about similar to 10 at the resonant frequency is possible for antennas with external sizes comparable with the wavelength. The parameters of the planar detectors on semi-insulating GaAs substrates in the 3-mm wavelength range (94-97 GHz) were measured. Directional patterns of the planar antennas at the resonant frequencies reasonably coincide with the calculated data.
- 出版日期2008-10