Dependence of oriented BN films on Si(100) substrate temperature

作者：Zhou H; Wang RZ; Huang AP; Wang M; Wang H; Wang B; Yan H^*

来源：Journal of Crystal Growth, 2002, 241(1-2): 261-265.

DOI：10.1016/S0022-0248(02)01240-X

• desorption
• stresses
• nitrides
• piezoelectric materials

The effects of substrate temperature (T-sub) Of Si(1 0 0) on the orientation of hexagonal Boron Nitride (h-BN) films synthesized using magnetron sputtering and Plasma-Enhanced CVD (PECVD) were studied, respectively. It was observed that higher T-sub could result in the growth of (0 0 0 2) oriented h-BN films and improve the crystallinity of the films, in contrast the films with the c-axis basically parallel to the surface at lower ones. A tentative explanation on the mechanism of the orientation characteristic is suggested, under the integration of compressive stress due to ion bombardment and desorption from thermal excitation.

• 出版日期2002-5
• 单位北京工业大学