Analog/RF performance of two tunnel FETs with symmetric structures

作者：Chen, Shupeng; Liu, Hongxia^*; Wang, Shulong^*; Li, Wei; Wang, Qianqiong

来源：Superlattices and Microstructures, 2017, 111: 568-573.

DOI：10.1016/j.spmi.2017.07.013

• Tunnel FETs
• Symmetric
• Cut-off frequency
• Analog/RF performance

In this paper, the radio frequency and analog performance of two tunnel field-effect transistors with symmetric structures are analyzed. The symmetric U-shape gate tunnel field-effect transistor (SUTFET) and symmetric tunnel field-effect transistor (STFET) are investigated by Silvaco Atlas simulation. The basic electrical properties and the parameters related to frequency and analog characteristics are analyzed. Due to the lower off-state leakage current, the STFET has better power consumption performance. The SUTFET obtains larger operating current (242 mu A/mu m), transconductance (490 mu S/mu m), output conductance (494 mu S/mu m), gain bandwidth product (3.2 GHz) and cut-off frequency (27.7 GHz). The simulation result of these two devices can be used as a guideline for their analog/RF applications.

• 出版日期2017-11
• 单位西安电子科技大学