Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95Pt0.05/Si(100) thin films

作者：Adusumilli Praneet^*; Lauhon Lincoln J; Seidman David N; Murray Conal E; Avayu Ori; Rosenwaks Yossi

来源：Applied Physics Letters, 2009, 94(11): 113103.

DOI：10.1063/1.3099970

• annealing
• atom probe field ion microscopy
• elemental semiconductors
• grain boundaries
• grain size
• nickel alloys
• platinum
• semiconductor-metal boundaries
• silicon
• surface diffusion
• surface texture
• surface topography
• thin films
• work function

Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni0.99Pt0.01)Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99Pt0.01)Si/Si(100) interface, which may be responsible for the increased resistance of (Ni0.99Pt0.01)Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.

• 出版日期2009-3-16
• 单位西北大学