摘要
The impact of interfacial roughness on the resistivity of thin copper films is examined using Monte Carlo simulation. In particular, after comparing the results of the Fuchs-Sondheimer model with those obtained from the simulation of a film bounded by flat surfaces, we highlight the role of collisions with two rough surfaces on electron trajectories. We then calculate the resistivity as a function of the amplitude of interfacial roughness and provide an interpretation of our results in terms of a simple trapping model in which conduction electrons are temporarily localized in surface indentations.
- 出版日期2012-7-1