Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures

作者：Rezvani S J^*; Favre L; Celegato F; Boarino L; Berbezier Isabelle; Pinto N

来源：Journal of Crystal Growth, 2016, 436: 51-55.

DOI：10.1016/j.jcrysgro.2015.11.029

• Growth models
• Germanium
• Nanomaterials
• Molecular beam epitaxy

We report on supersaturation state effect in diffusion-induced vapor-liquid-solid growth of Ge nanowires at high temperature. Our experimental investigation establishes that at T >= 550 degrees C the growth is hindered while the growth limitation is not resulted from a high value of the desorption rate. We demonstrate that the suppressed growth is a result of the droplets large chemical potential that inhibit the supersaturation state. This results either in a strong growth limitation due to a significant droplets enlargement or to a growth cessation.

• 出版日期2016-2-15
• 单位Perugia