High-gain infrared-to-visible upconversion light-emitting phototransistors

作者：Yu Hyeonggeun; Kim Doyoung; Lee Jinhyung; Baek Sujin; Lee Jaewoong; Singh Rajiv; So Franky^*

来源：Nature Photonics, 2016, 10(2): 129-+.

DOI：10.1038/NPHOTON.2015.270

Infrared-to-visible upconversion devices made by integrating an infrared quantum dot photodetector with an organic light-emitting diode potentially offer a route to low-cost, pixel-free infrared imaging. However, making such devices sufficiently efficient for practical use is a challenge. Here, we report a high-gain vertical phototransistor with a perforated metallic source electrode having an EQE up to 1 x 10(5)% and a detectivity of 1.2 x 10(13) Jones. By incorporating a phosphorescent organic light-emitting diode in this phototransistor, an infrared-to-visible upconversion LEPT with a photon-to-photon conversion efficiency of over 1,000% is demonstrated.

• 出版日期2016-2