摘要
The temperature (T) dependent de conductivity (sigma(DC)) (down to 20 mK) and dielectric function at optical frequencies (0.002-6 eV) and 6.5 GHz are used to probe the inhomogeneous disorder-driven insulator-metal transition in conducting polymers. A correlation between large low T sigma(DC) and the presence to low T of a small fraction of the carrier density delocalized with long transport times (>10(-13) s) indicates that metallic sigma(DC) is due to only a small fraction of the charge carriers. The achievable sigma(DC) for these systems when the entire charge carrier density participates is estimated to surpass that of copper.
- 出版日期1997-5-19