Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr-Hf-O Layer for Novel Nonvolatile Memory Application

作者：Yan, Xiaobing^*; Li, Yucheng; Zhao, Jianhui; Zhou, Zhenyu

来源：IEEE Transactions on Electron Devices, 2017, 64(2): 587-592.

DOI：10.1109/TED.2016.2637365

• Ambipolar charge injected
• bistable capac-itance performance
• inlaid Zr-Hf-O (ZHO) layer

In this paper, we present a distinguished hys-teresis behavior by a few nanometers inlaid Zr-Hf-O (ZHO) layer between the Ba0.6Sr0.4TiO3(BST) film and the metal Pt electrode. The capacitance-voltage curve shows an insignificantchange in the range of 0.3-1MHz. The excellent retention property showing the difference of high state and low state is estimated as about 23.0% and 12.5% after one year and ten years, which might be caused by the deeper trap in an interdiffusion layer. The possible mechanism is proposed that the BST/ZHO interface exists as an interdiffu-sion, which could create additional defects and ambipolar charge injection causing the hysteresis behavior due to a postdeposition annealing process. The device can be employed as a promising candidate for applying in novel nonvolatile memory device.

• 出版日期2017-2
• 单位河北大学