Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlOx on the surface passivation of crystalline silicon

作者：Lee Hyunju^*; Sawamoto Naomi; Ikeno Norihiro; Arafune Koji; Yoshida Haruhiko; Satoh Shin ichi; Chikyow Toyohiro; Ogura Atsushi

来源：Japanese Journal of Applied Physics, 2014, 53(4): 04ER06.

DOI：10.7567/JJAP.53.04ER06

The effects of interface properties such as a negative fixed charge density and an interface trap density on the surface passivation of crystalline Si by O-3-based batch ALD AlOx were studied. High-quality surface passivation with S-max of similar to 10cm/s was obtained from the AlOx samples deposited at 200 degrees C after annealing. This feature is attributed to the excellent field effect passivation by the high negative fixed charge density of similar to-5 x 10(12)cm(-2) and chemical passivation, which reduces the interface trap density to similar to 1 x 10(11)eV(-1)cm(-2). The annealed AlOx samples deposited at 200 degrees C also show high thermal stability during firing at 850 degrees C. Additionally, we found that the formation of a thin SiOx interlayer is essential for the formation of a high negative fixed charge density that induces strong field effect passivation, and that defect passivation at the Si/SiOx interface by diffused hydrogen from AlOx layers is the origin of chemical passivation.

• 出版日期2014-4