Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory

作者：Zhao Liang^*; Park Seong Geon; Magyari Koepe Blanka; Nishi Yoshio

来源：Applied Physics Letters, 2013, 102(8): 083506.

DOI：10.1063/1.4794083

Doping has often been considered for performance improvement of resistive memories (ReRAM), but the effects of many different dopants have not been distinguished. To obtain a systematic understanding of doping effects, density functional theory calculations are performed to investigate 9 metal dopants in TiO2 ReRAM. The dopants' effects on both electronic structures and vacancy-formation stability of single vacancy and conductive filament structures are discussed in detail. Trends in the physical properties using various dopants are revealed and well explained by valence-electron-based rules. Their implications to resistive switching suggest that forming/switching characteristics can be adjusted continuously by valence-based dopant selection.

• 出版日期2013-2-25