Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n(+)/p Diode Achieved by Implantation and Excimer Laser Annealing

作者：Wang Chen; Li Cheng^*; Huang Shihao; Lu Weifang; Yan Guangming; Lin Guangyang; Wei Jiangbin; Huang Wei; Lai Hongkai; Chen Songyan

来源：Applied Physics Express, 2013, 6(10): 106501.

DOI：10.7567/APEX.6.106501

Excimer laser annealing of phosphorus-implanted p-type germanium substrate with various laser energy densities for n(+)/p junction were investigated. The effects of laser energy density on the redistribution of dopant, surface morphology, and recrystallization of the amorphous Ge induced by ion implantation were characterized. A low specific contact resistivity of 1.61 x 10(-6) Omega.cm(2) was achieved from Al/n-Ge ohmic contact, in which phosphorus-implanted Ge was annealed at a laser energy density of 250 mJ/cm(2), tailoring a small phosphorus diffusion length, high activation level, and low dopant loss. A well-behaved Ge n(+)/p diode with a rectification ratio up to 1.99 x 10(5) was demonstrated.

• 出版日期2013-10
• 单位厦门大学